Antiguiding index profiles in broad strip semiconductor lasers for high-power, single-mode operation

Author

Chan, A.K. ; Lai, C.P. ; Taylor, H.F.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

24

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

489

Lastpage

495

Abstract

Solutions to the wave equations for a one-dimensional quadratic variation in the complex refractive index profile are used to calculate gain and field distributions for the lateral modes of broad-stripe semiconductor lasers. It is found that a large difference in gain between the fundamental mode and higher-order modes is obtained in profiles with strong real-index antiguiding and weak imaginary-index guiding. The effect of truncating the quadratic profile is explored. A criterion for comparing the tendency for single-mode operation in different index profiles is introduced and applied to quadratic, step, and array profiles. Based on the analysis, device structures for achieving high-power, single-mode operation are proposed.<>

Keywords

laser modes; refractive index; semiconductor junction lasers; array profiles; broad strip semiconductor lasers; complex refractive index profile; field distributions; gain; high-power single-mode operation; lateral modes; quadratic profiles; real-index antiguiding; step profiles; wave equations; weak imaginary-index guiding; Laser modes; Optical resonators; Optical scattering; Partial differential equations; Phased arrays; Power lasers; Refractive index; Semiconductor laser arrays; Semiconductor lasers; Strips;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.150

Filename

150