Title :
Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device
Author_Institution :
Dept. of Electr. Eng., Colorado Univ., Denver, CO, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
Device modeling is used to analyze the steady-state current voltage characteristics of double heterostructure AlGaAs/GaAs pnpn switches in the presence of interface and bulk recombination mechanisms. Simulation results show that the holding current increases significantly by shortening the carrier lifetime at heterojunction interface, while the holding voltage and breakover point remain relatively constant. Results also indicate that shortening the carrier lifetime in the inner pn homojunction region only increases the off-state leakage current. These results are in agreement with experimental data obtained by others, and may be used to design a device with optimum switching performance
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron-hole recombination; gallium arsenide; leakage currents; photoconducting switches; AlGaAs-GaAs; breakover point; bulk recombination; carrier lifetime; double heterostructure pnpn switches; heterojunction interface; holding current; holding voltage; inner pn homojunction region; off-state leakage current; pnpn bistable device; recombination mechanisms; steady-state current voltage characteristics; switching characteristics; Charge carrier lifetime; Current-voltage characteristics; Electrons; Gallium arsenide; Heterojunctions; Leakage current; Optical bistability; Optical devices; Optical films; Optical sensors; Radiative recombination; Silicon carbide; Solid state circuits; Steady-state; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
