Title :
1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
Author :
Sellers, I.R. ; Liu, H.Y. ; Groom, K.M. ; Childs, D.T. ; Robbins, D. ; Badcock, T.J. ; Hopkinson, M. ; Mowbray, D.J. ; Skolnick, M.S.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Abstract :
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.
Keywords :
III-V semiconductors; current density; electroluminescence; electroluminescent devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; multilayers; quantum dot lasers; semiconductor epitaxial layers; sputter etching; waveguide lasers; 1.3 micron; 293 to 298 K; InAs-GaAs; cleaved facets; multilayer quantum dot laser; reflectivity coated facets; room-temperature threshold current density; three layer device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046692
