• DocumentCode
    1151897
  • Title

    1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

  • Author

    Sellers, I.R. ; Liu, H.Y. ; Groom, K.M. ; Childs, D.T. ; Robbins, D. ; Badcock, T.J. ; Hopkinson, M. ; Mowbray, D.J. ; Skolnick, M.S.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Sheffield, UK
  • Volume
    40
  • Issue
    22
  • fYear
    2004
  • Firstpage
    1412
  • Lastpage
    1413
  • Abstract
    A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.
  • Keywords
    III-V semiconductors; current density; electroluminescence; electroluminescent devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; multilayers; quantum dot lasers; semiconductor epitaxial layers; sputter etching; waveguide lasers; 1.3 micron; 293 to 298 K; InAs-GaAs; cleaved facets; multilayer quantum dot laser; reflectivity coated facets; room-temperature threshold current density; three layer device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046692
  • Filename
    1352857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1151897