Title :
High-temperature (T=490 K) operation of 5.8 μm quantum cascade lasers with InP/GaInAs waveguides
Author :
Friedrich, A. ; Scarpa, G. ; Boehm, G. ; Amann, M.-C.
Author_Institution :
Walter-Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
Abstract :
5.8 μm Ga0.4In0.6As/Al0.56In0.44As strain-compensated quantum-cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy have been fabricated. Low threshold current densities and high-temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.
Keywords :
III-V semiconductors; aluminium compounds; claddings; current density; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; waveguides; 490 K; 5.8 μm quantum cascade lasers; 5.8 micron; GaInAs cladding layers; GaInAs-AlInAs; InP cladding layers; InP-GaInAs; InP/GaInAs waveguides; high-temperature operation; solid-source molecular-beam epitaxy; strain-compensated quantum-cascade lasers; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040604
