• DocumentCode
    1151927
  • Title

    High-temperature (T=490 K) operation of 5.8 μm quantum cascade lasers with InP/GaInAs waveguides

  • Author

    Friedrich, A. ; Scarpa, G. ; Boehm, G. ; Amann, M.-C.

  • Author_Institution
    Walter-Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
  • Volume
    40
  • Issue
    22
  • fYear
    2004
  • Firstpage
    1416
  • Lastpage
    1417
  • Abstract
    5.8 μm Ga0.4In0.6As/Al0.56In0.44As strain-compensated quantum-cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy have been fabricated. Low threshold current densities and high-temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.
  • Keywords
    III-V semiconductors; aluminium compounds; claddings; current density; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; waveguides; 490 K; 5.8 μm quantum cascade lasers; 5.8 micron; GaInAs cladding layers; GaInAs-AlInAs; InP cladding layers; InP-GaInAs; InP/GaInAs waveguides; high-temperature operation; solid-source molecular-beam epitaxy; strain-compensated quantum-cascade lasers; threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040604
  • Filename
    1352860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1151927