DocumentCode :
1151929
Title :
A Large-Area High-Reflectivity Broadband Monolithic Single-Crystal-Silicon Photonic Crystal Mirror MEMS Scanner With Low Dependence on Incident Angle and Polarization
Author :
Jung, Il Woong ; Mallick, Shrestha Basu ; Solgaard, Olav
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
15
Issue :
5
fYear :
2009
Firstpage :
1447
Lastpage :
1454
Abstract :
In this paper, we introduce a single-axis resonant combdrive microelectromechanical systems (MEMS) scanner with a large-area highly reflective broadband monolithic single-crystal-silicon (SCS) photonic crystal (PC) mirror. PC mirrors can be made from a single monolithic piece of silicon through alternate steps of etching and oxidation. This process allows the fabrication of a stress-free PC reflector in SCS with better optical flatness than deposited films such as polysilicon slabs on low-index oxide. PC mirrors can be made in IR transparent dielectric material and can achieve high reflectivity over a broad wavelength range. PC reflectors have several advantages over other mirror technologies. They can tolerate much higher processing temperatures and higher incident optical powers as well as operate in more corrosive environments than metals. Compared to multilayer dielectric stacks, PC mirrors allow for simpler process integration, thus making them highly compatible with CMOS and MEMS processing. In this paper, we fabricate a PC mirror MEMS scanner in SCS without any deposited films. Our PC mirrors show broadband high reflectivity in the wavelength range from 1550 to 1600 nm, and very low angular and polarization dependence over this same range. The single-axis MEMS scanners are fabricated on silicon-on-insulator (SOI) wafers with the PC mirrors also fabricated in the SOI device layer. The scanners are actuated by electrostatic comb drives on resonance. Dynamic deflection measurements show that the scanners achieve 22deg total scan angle with an input square wave of 67 V and have a resonance frequency of 2.13 kHz.
Keywords :
electrostatic actuators; etching; integrated optics; light polarisation; micro-optomechanical devices; micromirrors; optical scanners; photonic crystals; reflectivity; silicon-on-insulator; IR transparent dielectric material; MEMS; SOI device; Si; dynamic deflection measurements; electrostatic combdrives; etching; frequency 2.13 kHz; high-reflectivity broadband single-crystal-silicon scanner; microelectromechanical systems; monolithic single-crystal-silicon scanner; oxidation; photonic crystal mirror; polarization; silicon-on-insulator wafers; single-axis resonant combdrive scanner; wavelength 1550 nm to 1600 nm; Broadband reflectivity; combdrives; generation of photonic elements by reactive ion etching (GOPHER); microelectromechanical systems (MEMS); micromirror; microoptoelectromechanical systems (MOEMS); monolithic; photonic crystal (PC) mirror; scanner;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2009.2021863
Filename :
5175332
Link To Document :
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