Single frequency electrooptical tuning of an extended cavity diode laser at 1500 nm wavelength

Author

Goedgebuer, Jean-Pierre ; Gurib, Salim ; Porte, Henri

Author_Institution

Lab. d´´Optique P.M. Duffieux, Univ. de Franche-Comte, Besancon, France

Volume

28

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1414

Lastpage

1418

Abstract

A wavelength-tunable, single-frequency GaInAsP-InP laser diode using an intracavity electrooptic LiNbO₃ crystal as the wavelength selective component is discussed. Wavelength tuning is achieved by applying a driving voltage on the crystal electrodes. First results indicate a tuning rate of 1 GHz/V over a tuning range of about 4 nm. This performance was obtained using a nonoptimized X-cut, Z-propagating LiNbO₃ crystal. A potential tuning rate of 6.5 GHz/V is possible with reasonable improvements

Keywords

III-V semiconductors; birefringence; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser cavity resonators; laser frequency stability; laser tuning; lithium compounds; semiconductor junction lasers; 1500 nm; GaInAsP-InP; IR; LiNbO₃; X-cut; Z-propagating; crystal electrodes; driving voltage; extended cavity diode laser; intracavity electrooptic LiNbO₃ crystal; semiconductors; single-frequency; tuning range; tuning rate; wavelength selective component; wavelength-tunable; Diode lasers; Distributed feedback devices; Filters; Frequency; Laser feedback; Laser tuning; Liquid crystals; Optical tuning; Tunable circuits and devices; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135290

Filename

135290