Title :
Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz
Author :
Makon, R.E. ; Driad, R. ; Schneider, K. ; Massler, Hermann ; Aidam, R. ; Quay, R. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. For Appl. Solid State Phys., Freiburg, Germany
Abstract :
A fundamental low phase noise W-band VCO extended by an output buffer using InP/InGaAs DHBT technology is reported. The fully integrated differential VCO exhibits operation frequencies ranging from 83 to 89 GHz. At 87 GHz, a minimum phase noise of -102 dBc/Hz at 1 MHz offset frequency has been achieved. Within the tuning range, a single ended output power up to 5 dBm was measured, resulting in a total signal power of 8 dBm.
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 83 to 89 GHz; DHBT VCO; InP-InGaAs; W-band VCO; double heterojunction bipolar transistor; fully integrated differential VCO; low phase noise; millimeter wave oscillators; voltage controlled oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050986
