Title :
Optimization of RESURF LDMOS transistors: an analytical approach
Author :
Parpia, Zahir ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
fDate :
3/1/1990 12:00:00 AM
Abstract :
The high-voltage behavior of the lateral double-diffused MOS transistor (LDMOST) is investigated using an analytical approach. Expressions for the breakdown voltage of an LDMOST fabricated on both thick and thin epitaxial layers are derived. On the basis of this information, a strategy for the optimization of RESURF LDMOSTs is developed. The accuracy of the analytical expressions is verified by comparison with two-dimensional simulation results
Keywords :
electric breakdown of solids; insulated gate field effect transistors; optimisation; power transistors; semiconductor device models; RESURF LDMOS optimisation; analytical approach; breakdown voltage; high-voltage behavior; lateral double-diffused MOS transistor; thick epitaxial layers; thin epitaxial layers; two-dimensional simulation; Analytical models; Application specific integrated circuits; Avalanche breakdown; Breakdown voltage; Circuit simulation; Conductivity; Doping; Epitaxial layers; MOSFETs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
