Title :
Effect of inter-layer dielectric on thermal reliability in poly-silicon thin film transistors
Author :
Park, J.-H. ; Shin, M.-Y. ; Park, S.-J. ; Han, M.K.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
Highly reliable polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated by silicon nitride as an inter-layer dielectric (ILD), where the thermal conductivity of silicon nitride is considerably higher than that of silicon oxide. The experimental results showed that the threshold voltage of the n-type poly-Si TFT with the proposed silicon nitride ILD was not degraded after high-power stress because the silicon nitride ILD may disperses the heat in the poly-Si TFT channels, which possibly improved the reliability of poly-Si TFTs without sacrificing the electrical characteristics.
Keywords :
dielectric thin films; elemental semiconductors; semiconductor device reliability; silicon; silicon compounds; thin film transistors; Si-SiN; inter-layer dielectric effect; n-type poly-Si TFT; poly-silicon thin film transistors; polycrystalline silicon thin film transistors; semiconductor device reliability; silicon nitride; thermal reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051670
