Title :
Improved low-frequency-noise characteristic of selectively hydrogen-pretreated quasi-enhancement HEMTs
Author :
Kang, I.H. ; Kim, S.C. ; Bahng, W. ; Kim, N.K. ; Song, J.I.
Author_Institution :
Power Semicond. Res. Group, Korea Electrotechnol. Res. Inst., Gyeongsangnam-Do, South Korea
Abstract :
A quasi-enhancement-mode (QE) HEMT having an improved low-frequency-noise characteristic was fabricated using a selective hydrogen pretreatment (SHP). The QE HEMT showed a reduction of low-frequency noise bulges compared with those of depletion-mode HEMT without an SHP, leading to a one-order smaller input noise spectral density at 100 Hz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device noise; 100 Hz; Al0.22Ga0.78As-In0.22Ga0.78As; QE HEMT; input noise spectral density; low-frequency-noise characteristic; microwave devices; quasi-enhancement-mode HEMT; selective hydrogen pretreatment; semiconductor device noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052133
