Title :
Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs
Author :
Mohammed, F.M. ; Wang, L. ; Koo, H.J. ; Adesida, I.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Illinois, Urbana-Champaign, IL, USA
Abstract :
Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77×10-7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78×10-6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.
Keywords :
Auger electron spectra; III-V semiconductors; MOCVD coatings; aluminium alloys; aluminium compounds; contact resistance; electrical resistivity; gallium compounds; gold alloys; high electron mobility transistors; molybdenum alloys; ohmic contacts; semiconductor device metallisation; silicon alloys; titanium alloys; wide band gap semiconductors; AlGaN-GaN; Auger electron spectroscopy analysis; HEMT; MOCVD-grown heterostructures; Si-induced enhancement; Ti/Al/Mo/Au metallisation; TiSiAlMoAu; contact resistance; high electron mobility transistor; intermetallics formation; ohmic contacts; specific contact resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051849
