Title :
Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs
Author :
Gao, G.B. ; Huang, Dijiang ; Chyi, Jen-Inn ; Chen, Jiann-Jong ; Morkoc, H.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL
fDate :
3/1/1990 12:00:00 AM
Abstract :
The current-induced breakdown phenomenon, which can occur in p-type collector heterojunction bipolar transistors (HBTs), is described. It is shown that the breakdown voltage across the p-type collector junction of HBTs decreases rapidly with increasing current density. The effects of collector structure, doping concentration, and layer thickness are analyzed
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; III-V semiconductors; breakdown voltage; collector structure; current density; current-induced breakdown phenomenon; doping concentration; heterojunction bipolar transistors; layer thickness; p-type collector; Annealing; Argon; Electric breakdown; Gallium arsenide; Heterojunction bipolar transistors; Implants; Laboratories; Oxidation; Rapid thermal processing; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
