Title :
MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200
Author :
Rockett, P.I. ; Pate, M.A. ; Claxton, P.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
3/1/1990 12:00:00 AM
Abstract :
Lattice-matched Ga0.51In0.49P-GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy that exhibit small-signal current gains as high as 200 are discussed. This result demonstrates the feasibility of using (InGa)P as an alternative to (AlGa)As in GaAs-based devices
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; (InGa)P; Ga0.51In0.49P-GaAs; HBT; III-V semiconductors; MBE-grown; heterojunction bipolar transistors; lattice matched interface; small-signal current gains; solid-source molecular-beam epitaxy; Bipolar transistors; Epitaxial layers; Etching; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
