DocumentCode
1152648
Title
A new method to determine the MOSFET effective channel width
Author
Arora, Narain D. ; Bair, Lawrence A. ; Richardson, Llanda M.
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
Volume
37
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
811
Lastpage
814
Abstract
A method of determining the effective channel width of a MOSFET device that is simple and accurate is discussed. While simple, this method takes the width-dependent series resistance of MOSFETs into account, which has not been done in previous methods. The results correlate well with SEM cross section measurements. In addition, the method is applicable to current scaled MOSFETs, requiring no measurements outside the normal operating range of the devices being characterized
Keywords
insulated gate field effect transistors; semiconductor device testing; MOSFET; SEM cross section measurements; channel width determination method; current scaled devices; effective channel width; width-dependent series resistance; Bipolar transistors; Capacitance measurement; Capacitance-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; MOSFET circuits; Molecular beam epitaxial growth;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.47793
Filename
47793
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