Title :
A new method to determine the MOSFET effective channel width
Author :
Arora, Narain D. ; Bair, Lawrence A. ; Richardson, Llanda M.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
A method of determining the effective channel width of a MOSFET device that is simple and accurate is discussed. While simple, this method takes the width-dependent series resistance of MOSFETs into account, which has not been done in previous methods. The results correlate well with SEM cross section measurements. In addition, the method is applicable to current scaled MOSFETs, requiring no measurements outside the normal operating range of the devices being characterized
Keywords :
insulated gate field effect transistors; semiconductor device testing; MOSFET; SEM cross section measurements; channel width determination method; current scaled devices; effective channel width; width-dependent series resistance; Bipolar transistors; Capacitance measurement; Capacitance-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; MOSFET circuits; Molecular beam epitaxial growth;
Journal_Title :
Electron Devices, IEEE Transactions on
