Comparison of InGaAs/InP p-i-n detectors grown by hydride and organometallic vapor phase epitaxy

Author

Ban, V.S. ; Woodruff, K. ; Lange, M. ; Olsen, G.H. ; Jones, K.A.

Author_Institution

EPITAXX Inc., Princeton, NJ, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

814

Lastpage

816

Abstract

In_0.53Ga_0.47As-InP photodetectors fabricated from two hydride vapor-phase epitaxy (VPE) and two organometallic vapor-phase epitaxy (OMVPE) wafers are discussed. All were processed in the same lot in a commercial production line. The wafers were obtained from four major laboratories around the world. Significant variations in photoluminescence intensity of the layers was observed. However, all four wafers had dark current yields of around 90% or more, demonstrating the suitability of both techniques for detector fabrication under identical processing conditions

Keywords

III-V semiconductors; gallium arsenide; indium compounds; p-i-n diodes; photodetectors; photodiodes; semiconductor epitaxial layers; vapour phase epitaxial growth; III-V semiconductors; In_0.53Ga_0.47As-InP; OMVPE; VPE; dark current yields; detector fabrication; hydride vapor-phase epitaxy; organometallic vapor phase epitaxy; p-i-n detectors; photodetectors; photodiodes; photoluminescence intensity; Dark current; Detectors; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Laboratories; PIN photodiodes; Photodetectors; Photoluminescence; Production;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47794

Filename

47794