DocumentCode
1152679
Title
Analysis of the kink effect in MOS transistors
Author
Hafez, I.M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution
Lab. de Phys. des Composants a Semicond., Grenoble, France
Volume
37
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
818
Lastpage
821
Abstract
An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is presented. This analysis enables a quantitative description of the excess drain current to be obtained for room and liquid-helium temperatures. In particular, it is found that the kink effect in a MOS transistor can be simply modeled by a body effect
Keywords
insulated gate field effect transistors; semiconductor device models; MOS transistors; MOSFETs; SOI devices; body effect model; bulk Si devices; excess drain current; kink effect; liquid-helium temperatures; room temperature; Electron devices; Gallium arsenide; MESFETs; MOS devices; MOSFETs; Silicon on insulator technology; Substrates; Temperature; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.47796
Filename
47796
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