Title :
Analysis of the kink effect in MOS transistors
Author :
Hafez, I.M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., Grenoble, France
fDate :
3/1/1990 12:00:00 AM
Abstract :
An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is presented. This analysis enables a quantitative description of the excess drain current to be obtained for room and liquid-helium temperatures. In particular, it is found that the kink effect in a MOS transistor can be simply modeled by a body effect
Keywords :
insulated gate field effect transistors; semiconductor device models; MOS transistors; MOSFETs; SOI devices; body effect model; bulk Si devices; excess drain current; kink effect; liquid-helium temperatures; room temperature; Electron devices; Gallium arsenide; MESFETs; MOS devices; MOSFETs; Silicon on insulator technology; Substrates; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
