Title :
Reply to `Comments on ``Unilateral gain of heterojunction bipolar transistors at microwave frequencies´´ ´
Author :
Prasad, Sheila ; Lee, Wai ; Fonstad, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
In reply to comments by H.O. Vickes (ibid., vol.36, p.1861-2, 1989), it is pointed out that the correct equation was used for calculations in a previously published paper by S. Prasad et al. (ibid., vol.35, no.12, p.2288-94, 1988), even though an incorrect equation was given
Keywords :
heterojunction bipolar transistors; solid-state microwave devices; HBT; heterojunction bipolar transistors; microwave frequencies; unilateral gain; Bipolar transistors; Electron devices; Equations; Error correction; Frequency; HEMTs; Heterojunction bipolar transistors; MODFETs; Materials science and technology; Microwave devices;
Journal_Title :
Electron Devices, IEEE Transactions on
