• DocumentCode
    1152714
  • Title

    Reply to `Comments on ``Unilateral gain of heterojunction bipolar transistors at microwave frequencies´´ ´

  • Author

    Prasad, Sheila ; Lee, Wai ; Fonstad, G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • Volume
    37
  • Issue
    3
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    In reply to comments by H.O. Vickes (ibid., vol.36, p.1861-2, 1989), it is pointed out that the correct equation was used for calculations in a previously published paper by S. Prasad et al. (ibid., vol.35, no.12, p.2288-94, 1988), even though an incorrect equation was given
  • Keywords
    heterojunction bipolar transistors; solid-state microwave devices; HBT; heterojunction bipolar transistors; microwave frequencies; unilateral gain; Bipolar transistors; Electron devices; Equations; Error correction; Frequency; HEMTs; Heterojunction bipolar transistors; MODFETs; Materials science and technology; Microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.47799
  • Filename
    47799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1152714