Design and operation of spin valve sensors

Author

Heim, D.E. ; Fontana, R.E., Jr. ; Tsang, C. ; Speriosu, V.S. ; Gurney, B.A. ; Williams, M.L.

Author_Institution

Storage Syst. Div., IBM Corp., San Jose, CA, USA

Volume

30

Issue

2

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

316

Lastpage

321

Abstract

Two types of patterned, unshielded Giant MagnetoResistance (GMR) spin valve sensors have been fabricated: nano-layered NiFe/Co/Cu/Co/NiFe and simpler NiFe/Cu/Co spin valves. GMR values of 7.6% for ΔH=10 Oe were measured for the nano-layered structures on coupons. Transfer curves in uniform fields were obtained and were in agreement with theoretical expectations. The sensors were highly linear and well biased. Optimum biasing of the free layer in the spin valve sensor has new features over that in AMR sensors. These were explored in shielded as well as unshielded spin valves using micromagnetic simulation

Keywords

cobalt; copper; electric sensing devices; magnetic multilayers; magnetic recording; magnetic thin film devices; magnetoresistive devices; nickel alloys; GMR values; NiFe-Co-Cu-Co-NiFe; NiFe/Co/Cu/Co/NiFe; micromagnetic simulation; nanolayered structures; optimum biasing; shielded spin valves; spin valve sensors; transfer curves; unshielded giant magnetoresistance sensors; Anisotropic magnetoresistance; Gas detectors; Giant magnetoresistance; Magnetic anisotropy; Magnetic sensors; Magnetic shielding; Micromagnetics; Perpendicular magnetic anisotropy; Sensor phenomena and characterization; Spin valves;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.312279

Filename

312279