DocumentCode :
1153118
Title :
Comparison of Long-Wave Infrared Quantum-Dots-in-a-Well and Quantum-Well Focal Plane Arrays
Author :
Andrews, Jonathan R. ; Restaino, Sergio R. ; Vandervelde, Thomas E. ; Brown, Jay S ; Sharma, Yagya D. ; Lee, Sang Jun ; Teare, Scott W. ; Reisinger, Axel ; Sundaram, Mani ; Krishna, Sanjay
Author_Institution :
Remote Sensing Div., Naval Res. Lab., Albuquerque, NM
Volume :
56
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
512
Lastpage :
516
Abstract :
This paper reports on a comparison between a commercially available quantum-well infrared focal plane array (FPA) and a custom quantum-dot (QD)-in-a-well (DWELL) infrared FPA in the long-wave infrared (LWIR). The DWELL detectors consist of an active region composed of InAs QDs embedded in In0.15Ga0.85As quantum wells. DWELL samples were grown using molecular beam epitaxy and fabricated into 320 times 256 pixels FPA with a flip-chip indium bump technique. Both the DWELL and QmagiQ commercial quantum-well detector were hybridized to an Indigo ISC9705 readout circuit and tested in the same camera system. Calibrated blackbody measurements at a device temperature of 60 K with LWIR optics yield a noise equivalent change in temperature of 17 mK and 91 mK for quantum-well and DWELL FPAs operating at 0.95- and 0.58-V biases, respectively. The comparison of the DWELL and quantum-well FPA when imaging a 35degC black body showed that the DWELL had a signal-to-noise ratio of 124 while the quantum-well FPA showed 1961. As well, the quantum-well FPA showed a higher collection efficiency of 1.3 compared to the DWELL.
Keywords :
III-V semiconductors; blackbody radiation; flip-chip devices; focal planes; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; optical fabrication; optical noise; quantum well devices; readout electronics; semiconductor quantum dots; semiconductor quantum wells; DWELL detector; In0.15Ga0.85As; InAs; LWIR; blackbody measurement; flip-chip indium bump technique; focal plane array; infrared image sensor; long-wave infrared FPA; molecular beam epitaxy growth; optical fabrication; quantum-dot detector; quantum-well detector; readout circuit; signal-to-noise ratio; temperature 17 mK; temperature 35 degC; temperature 60 K; temperature 91 mK; voltage 0.58 V; voltage 0.95 V; Circuit testing; Detectors; Indium; Molecular beam epitaxial growth; Optical noise; Quantum dots; Quantum well devices; Quantum wells; System testing; Temperature; Infrared image sensors; quantum dots (QDs); quantum wells; radiometry;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2011725
Filename :
4781539
Link To Document :
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