DocumentCode
1153415
Title
Influence of Dynamic Access Resistances on the Linearity of Large GaN HEMT Powerbars
Author
Khalil, Ibrahim ; Heinrich, Wolfgang
Author_Institution
Ferdinand-Braun-Inst. (FBH), Berlin, Germany
Volume
19
Issue
8
fYear
2009
Firstpage
527
Lastpage
529
Abstract
This paper presents a study of the dynamic access resistance related nonlinearity of GaN HEMT devices with very large periphery. The bias-dependent access resistance is deembeded to the chip reference plane. Our measurement results show that the bias dependence for such a large device is insignificant, at least within the investigated 2 GHz frequency band. Instead, the main source of nonlinearity is the current source. Quantitatively, linearity measurements reveal a good linear behavior of these devices.
Keywords
III-V semiconductors; UHF field effect transistors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT powerbars; bandwidth 2 GHz; chip reference plane; dynamic access resistance; linearity measurements; nonlinearity; Amplifier distortion; cross modulation distortion; distortion; dynamic access resistance; intermodulation distortion; microwave power field effect transistor (FET) amplifiers;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2009.2024847
Filename
5175470
Link To Document