Title :
The effects of drift and diffusion in semiconductors on plane wave interaction at interfaces
Author :
Davis, William A. ; Krowne, Clifford M.
Author_Institution :
Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
The field solution for a semiconductor material is presented in terms of gradient and curl components based on a drift-diffusion model. This is done for both biased and unbiased semiconductors where the bias causes a drift current. A simple demonstration of the field representation is given for plane-wave scattering at a dielectric-semiconductor interface when the incident field used is either TMz or TEz
Keywords :
carrier mobility; semiconductor device models; semiconductors; biased semiconductors; dielectric-semiconductor interface; drift-diffusion model; field solution; plane wave interaction; plane-wave scattering; unbiased semiconductors; Boundary conditions; Charge carrier processes; Conductivity; Dielectrics; Equations; Light scattering; Microstrip; Optical propagation; Semiconductor materials; Surface waves;
Journal_Title :
Antennas and Propagation, IEEE Transactions on
