Title :
A fully integrated 24-dBm CMOS power amplifier for 802.11a WLAN applications
Author :
YunSeong Eo ; KwangDu Lee
Author_Institution :
Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea
Abstract :
A fully integrated 24-dBm complementary metal oxide semiconductor (CMOS) power amplifier (PA) for 5-GHz WLAN applications is implemented using 0.18-μm CMOS foundry process. It consists of differential three-stage amplifiers and fully integrated input/output matching circuits. The amplifier shows a P1 of 21.8 dBm, power added efficiency of 13%, and gain of 21 dB, respectively. The saturated output power is above 24.1 dBm. This shows the highest output power among the reported 5-GHz CMOS PAs as well as completely satisfying IEEE 802.11a transmitter back off requirement.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; differential amplifiers; wireless LAN; 0.18 micron; 21 dB; 5 GHz; 802.11a WLAN applications; CMOS analog integrated circuit; CMOS foundry process; CMOS power amplifier; IEEE 802.11a transmitter; differential three-stage amplifiers; input/output matching circuits; CMOS process; Circuits; Differential amplifiers; Foundries; Gain; Impedance matching; Power amplifiers; Power generation; Semiconductor optical amplifiers; Wireless LAN; Complementery metal oxide semiconductor (CMOS) analog integrated circuit; WLAN; power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.837080
