A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-μm CMOS technology

Author

Ming-Da Tsai ; Huei Wang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

14

Issue

11

fYear

2004

Firstpage

522

Lastpage

524

Abstract

An ultra-wideband mixer using standard complementary metal oxide semiconductor (CMOS) technology was first proposed in this paper. This broadband mixer achieves measured conversion gain of 11 /spl plusmn/ 1.5 dB with a bandwidth of 0.3 to 25 GHz. The mixer was fabricated in a commercial 0.18-μm CMOS technology and demonstrated the highest frequency and bandwidth of operation. It also presented better gain-bandwidth-product performance compared with that of GaAs-based HBT technologies. The chip area is 0.8 × 1 mm².

Keywords

CMOS integrated circuits; MMIC mixers; integrated circuit design; ultra wideband technology; 0.18 micron; 0.3 to 25 GHz; CMOS technology; broadband mixer; microwave monolithic integrated circuit; ultra-wideband mixer; Bandwidth; CMOS technology; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MMICs; Millimeter wave technology; Mixers; Ultra wideband technology; Complementary metal oxide semiconductor (CMOS); microwave monolithic integrated circuit (MMIC); mixer; wideband;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.837065

Filename

1353260