DocumentCode
1153553
Title
Charge storage in InAlAs/InGaAs/InP floating gate heterostructures
Author
Lott, J.A. ; Klem, I.F. ; Weaver, H.T. ; Tigges, C.P. ; Radoslovich-Cibicki, V.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
972
Lastpage
973
Abstract
Charge retention in floating gate InAlAs/InGaAs/InP field effect transistors is limited by lateral electron motion along the storage channel, a different direction for motion than found for AlAs/GaAs devices. Storage times as a function of temperature for the InP based alloy devices are reported and compared with similar AlAs/GaAs devices by using Poisson equation models.
Keywords
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated memory circuits; AlAs/GaAs devices; InAlAs-InGaAs-InP; InP based alloy devices; Poisson equation models; charge retention; floating gate FETs; lateral electron motion; semiconductors; storage channel; storage times; temperature effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900632
Filename
107962
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