DocumentCode :
1153565
Title :
High-Power Single-Mode 1.3- 
m InGaAsP–InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures
Author :
Kim, Kyoung Chan ; Jang, Dong-Kie ; Lee, Jung Il ; Kim, Tae Geun ; Lee, Woo Won ; Kim, Jeong Ho ; Yang, Eun Jeong ; Koo, Bon Jo ; Han, Il Ki
Volume :
21
Issue :
19
fYear :
2009
Firstpage :
1438
Lastpage :
1440
Abstract :
A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mum-wide ridge top and a 1.5-mm-long uncoated cavity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; ridge waveguides; waveguide lasers; InGaAsP-InGaAsP; high-power multiple-quantum-well laser diode; kink-free output power; power 140 mW; single-lateral-mode operation; uncoated laser cavity; wavelength 1.3 mum; wide-aperture ridge waveguide structure; High-power; multiple quantum well (MQW); single-mode laser diodes (LDs); wide aperture;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2028153
Filename :
5175483
Link To Document :
