Title :
Localised temperature dynamics of GaAlAs laser facets investigated by Raman microprobe measurements
Author :
Krantz, M.C. ; Rosen, H.J. ; Lenth, W.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fDate :
7/5/1990 12:00:00 AM
Abstract :
Raman micro-probe studies of diode laser facet temperatures in CW operation show a significant linear temperature rise below the laser threshold and a rapid nonlinear heating above the threshold. Dynamical measurements using current injection pulses show fast heating of the laser facet with a sub-microsecond risetime and much slower cooling within several micro-seconds.
Keywords :
III-V semiconductors; Raman spectra of inorganic solids; aluminium compounds; gallium arsenide; laser beam effects; laser variables measurement; semiconductor junction lasers; spectral methods of temperature measurement; CW operation; GaAlAs laser facets; Raman microprobe measurements; current injection pulses; diode laser facet temperatures; dynamical measurements; fast heating; linear temperature rise; localised temperature dynamics; rapid nonlinear heating; semiconductors; slower cooling; sub-microsecond risetime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900643
