DocumentCode
1153831
Title
Very high frequency performance of nanometre scale GaAs MESFETS
Author
Adams, Julie A. ; Thayne, I.G. ; Taylor, M.R.S. ; Wilkinson, C.D.W. ; Beaumont, S.P. ; Johnson, N.P. ; Kean, A.H. ; Stanley, C.R.
Author_Institution
Dept. of Electron. & Electron. Eng., Nanoelectron. Res. Centre, Glasgow Univ., UK
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
1019
Lastpage
1020
Abstract
GaAs MESFETs with gate lengths from 300 nm down to 40 nm have been fabricated and characterised at microwave frequencies. The MESFETs have excellent DC and high frequency performance. It is shown that the unity gain cut-off frequency fT, is not inversely proportional to the gate-length, as a consequence of carrier transit delays.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave devices; 300 to 40 nm; DC performance; GaAs; MESFETS; carrier transit delays; f T; gate-length; high frequency performance; microwave frequencies; microwave performance; semiconductors; short channel effects; unity gain cut-off frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900660
Filename
107990
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