Title :
High speed 1.3 mu m InGaAs/GaAs superlattice on Si photodetector
Author :
Zirngible, M. ; Bischoff, J.C. ; Ilegems, M. ; Hirtz, J.P. ; Bartenlian, B. ; Beaud, Paul ; Hodel, W.
Author_Institution :
Inst. de Micro-et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
fDate :
7/5/1990 12:00:00 AM
Abstract :
High speed metal-semiconductor-metal photodetectors sensitive at 1.3 mu m have been realised on Si substrates. The active layer consists of a strained InGaAs/GaAs superlattice grown by molecular beam epitaxy on GaAs-on-Si. The device exhibits a very fast response at 1.3 mu m (FWHM<35 ps), a reasonable low dark current (2 mu A and 8 mu A at 10 and 20 V bias, respectively) and a wavelength dependent internal quantum efficiency of 15-50% at 20 V bias.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; silicon; substrates; 1.3 micron; 10 to 20 V; 15 to 50 percent; 2 to 8 muA; 35 ps; GaAs-on-Si; InGaAs-GaAs-Si; Si substrates; dark current; fast response; metal-semiconductor-metal photodetectors; molecular beam epitaxy; semiconductors; strained superlattice; wavelength dependent internal quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900666
