DocumentCode :
1153981
Title :
Low loss optical rigde waveguides in a strained GeSi epitaxial layer grown on silicon
Author :
Splett, A. ; Schuppert, B. ; Petermann, K. ; Kasper, Erich ; Kibbel, H.
Author_Institution :
Tech. Univ. Berlin, West Germany
Volume :
26
Issue :
14
fYear :
1990
fDate :
7/5/1990 12:00:00 AM
Firstpage :
1035
Lastpage :
1037
Abstract :
The realisation of single-mode ridge waveguides in a strained Si1-xGex epitaxial layer grown on silicon by MBE is reported. Measurements at lambda =1.3 mu m yield a refractive index enhancement of 2.2*10-3 for x=0.01 and waveguide losses around 3-5 dB/cm.
Keywords :
Ge-Si alloys; molecular beam epitaxial growth; optical waveguides; optoelectronic devices; semiconductor epitaxial layers; 1.3 micron; MBE; Si substrate; Si 1-xGe x-Si; low loss optical ridge waveguides; pseudomorphic growth; refractive index enhancement; single-mode ridge waveguides; strained GeSi epitaxial layer; waveguide losses;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900671
Filename :
108001
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1153981
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