• DocumentCode
    1153981
  • Title

    Low loss optical rigde waveguides in a strained GeSi epitaxial layer grown on silicon

  • Author

    Splett, A. ; Schuppert, B. ; Petermann, K. ; Kasper, Erich ; Kibbel, H.

  • Author_Institution
    Tech. Univ. Berlin, West Germany
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    1035
  • Lastpage
    1037
  • Abstract
    The realisation of single-mode ridge waveguides in a strained Si1-xGex epitaxial layer grown on silicon by MBE is reported. Measurements at lambda =1.3 mu m yield a refractive index enhancement of 2.2*10-3 for x=0.01 and waveguide losses around 3-5 dB/cm.
  • Keywords
    Ge-Si alloys; molecular beam epitaxial growth; optical waveguides; optoelectronic devices; semiconductor epitaxial layers; 1.3 micron; MBE; Si substrate; Si 1-xGe x-Si; low loss optical ridge waveguides; pseudomorphic growth; refractive index enhancement; single-mode ridge waveguides; strained GeSi epitaxial layer; waveguide losses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900671
  • Filename
    108001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153981