Title :
13 Gb/s D-type flip-flop IC using GaS MESFETs
Author :
Ohhata, M. ; Yamane, Y. ; Enoki, Tsutomu ; Sugitani, S. ; Kato, Nei ; Hagimoto, Ken ; Hirayama, Motoko
Author_Institution :
NTT LSI Lab., Kanagawa Pref., Japan
fDate :
7/5/1990 12:00:00 AM
Abstract :
A GaAs monolithic master-slave D-type flip-flop (D-FF) IC has been developed for ultrahigh-speed optical transmission systems. The IC was designed using LSCFL (low-power source coupled FET logic) and realised by 0.15 mu m gate-length MESFETs with a cut-off frequency of 65 GHz. The maximum operating speed was 13 Gb/s. This is the fastest speed ever reported for a D-FF.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; flip-flops; gallium arsenide; 0.15 micron; 13 Gbit/s; 65 GHz; D-FF; D-type flip-flop; D-type flip-flop IC; GaAs; cut-off frequency; low power SCFL; low-power source coupled FET logic; maximum operating speed; semiconductors; ultrahigh-speed optical transmission systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900674
