Title :
Silicon nitride direct bonding
Author :
Ismail, Mohamad Safari ; Bower, R.W. ; Veteran, J.L. ; Marsh, O.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
fDate :
7/5/1990 12:00:00 AM
Abstract :
Direct bonding has been accomplished between silicon nitride coated wafers and both nitride coated and uncoated silicon wafers. Successful bonding occurred when the initial nitride was hydrophilic as deposited or the nitride surface is rendered hydrophilic by a wet oxidation process prior to bonding.
Keywords :
dielectric thin films; integrated circuit technology; semiconductor technology; silicon compounds; Si wafer bonding; Si-Si; Si 3N 4-Si 3N 4 direct bond; wafer direct bond; wet oxidation process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900677
