• DocumentCode
    1154051
  • Title

    Silicon nitride direct bonding

  • Author

    Ismail, Mohamad Safari ; Bower, R.W. ; Veteran, J.L. ; Marsh, O.J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    1045
  • Lastpage
    1046
  • Abstract
    Direct bonding has been accomplished between silicon nitride coated wafers and both nitride coated and uncoated silicon wafers. Successful bonding occurred when the initial nitride was hydrophilic as deposited or the nitride surface is rendered hydrophilic by a wet oxidation process prior to bonding.
  • Keywords
    dielectric thin films; integrated circuit technology; semiconductor technology; silicon compounds; Si wafer bonding; Si-Si; Si 3N 4-Si 3N 4 direct bond; wafer direct bond; wet oxidation process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900677
  • Filename
    108007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154051