DocumentCode :
1154064
Title :
Magnetic surface anisotropy at the iron-silicon interface
Author :
Frait, Zdenek ; Fraitova, Dagmar ; Dufour, Catherine ; Mangin, Philippe ; Marchal, Gé;rard
Author_Institution :
Inst. of Phys., Czechoslovak Acad. of Sci., Prague, Czechoslovakia
Volume :
30
Issue :
2
fYear :
1994
fDate :
3/1/1994 12:00:00 AM
Firstpage :
711
Lastpage :
713
Abstract :
The results of measurements of the surface magnetic energy at the iron-silicon interface by means of the standing spin-wave resonance experiments, performed at RT and at frequencies of 17 and 25 GHz, are reported. The samples in the form of thin polycrystalline iron films (10 to 220 nm thick) sandwiched between silicon layers (7.5 nm thick) were prepared by evaporation in UHV. The surface magnetic energy was found of the easy plane type (negative surface anisotropy) with values in the range -0.4 to -1.8 erg/cm2, its origin is discussed. The theoretical methods used for the evaluation of the experiment are commented, the penetration depth of the spin-wave surface mode is evaluated
Keywords :
elemental semiconductors; ferromagnetic resonance; iron; magnetic anisotropy; magnetic interface phenomena; magnetic surface phenomena; magnetic thin films; silicon; spin waves; 10 to 220 nm; 300 K; Fe-Si; Fe-Si interface; films; magnetic surface anisotropy; penetration depth; spin-wave resonance; spin-wave surface mode; Anisotropic magnetoresistance; Energy measurement; Frequency measurement; Iron; Magnetic anisotropy; Magnetic films; Magnetic resonance; Performance evaluation; Perpendicular magnetic anisotropy; Semiconductor films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.312384
Filename :
312384
Link To Document :
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