Title :
Novel integral heatsink structures for power MMICs
Author :
Bestwick, P.R. ; Davies, I.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
fDate :
7/5/1990 12:00:00 AM
Abstract :
A standard GaAs ´foundry´ process has been extended to produce power FET devices developing 6 W at S-band. The devices are fabricated in GaAs using ion implanted active layers with a deep acceptor implant. The substrate thickness of the standard GaAs foundry process has been retained, with novel integral heat-sinks under the power devices. This approach ensures high manufacturing yield and compatibility with a well characterised GaAs foundry process.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; heat sinks; integrated circuit manufacture; integrated circuit technology; ion implantation; power integrated circuits; 6 W; S-band; SHF; UHF; deep acceptor implant; high manufacturing yield; integral heatsink structures; ion implanted active layers; power FET devices; power MMICs; semiconductors; standard GaAs foundry process; substrate thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900680
