Title :
Compact temperature-compensated CMOS current reference
Author :
Fiori, F. ; Crovetti, P.S.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
A new compact, high precision, temperature-compensated, all-MOS current reference is presented and its operation principle is discussed. Such a reference has been designed and tested by computer simulations, which have shown a mean temperature drift of 28 ppm/°C in the temperature range between -30 and +100°C.
Keywords :
CMOS integrated circuits; circuit simulation; compensation; reference circuits; -30 to 100 degC; CMOS integrated circuits; all-MOS current reference; computer simulations; mean temperature drift; reference circuits; temperature compensation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030087