DocumentCode
1154120
Title
Post growth tailoring of the optical properties of GaAs-AlGaAs multiple quantum wells
Author
Ghisoni, M. ; Gibson, M. ; Rivers, A. ; Boyd, I.W. ; Parry, Guillaume ; Roberts, Jeffrey S.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
1058
Lastpage
1059
Abstract
The post-growth bandgap engineering of a fifty period multiple quantum well is reported. A controlled blue shift of the band edge is achieved through the deposition of a SiOx encapsulant followed by rapid thermal annealing giving shifts of up to 16 meV. The expected depth dependence of this process is not observed and thus the blue shifted samples retain clearly resolved room temperature excitonic features and preserve the quantum confined Stark effect.
Keywords
III-V semiconductors; Stark effect; aluminium compounds; annealing; gallium arsenide; optoelectronic devices; semiconductor quantum wells; GaAs-AlGaAs; MQW; RTA; SiO x encapsulant; bandgap tailoring; controlled blue shift; multiple quantum wells; optical properties; post-growth bandgap engineering; quantum confined Stark effect; rapid thermal annealing; room temperature excitonic features; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900685
Filename
108014
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