DocumentCode :
1154137
Title :
Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures
Author :
Chong, T.C. ; Wan, H.W. ; Chua, S.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Volume :
26
Issue :
14
fYear :
1990
fDate :
7/5/1990 12:00:00 AM
Firstpage :
1060
Lastpage :
1061
Abstract :
The polarisation dependence of the field-induced refractive index variation in strained and unstrained quantum well structures is analysed. It is shown that the effect of strain combined with the quantum-size effect can be used to control the polarisation dependence of the refractive index variation which is significant in thin quantum wells.
Keywords :
electro-optical devices; light polarisation; refractive index; semiconductor quantum wells; effect of strain; electrooptic modulator application; field-induced refractive index variation; polarisation dependence; polarisation dependence control; quantum-size effect; strained quantum well structures; thin quantum wells; unstrained quantum well structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900686
Filename :
108015
Link To Document :
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