Title :
350 mW reliable operation in fundamental transverse-mode InGaAs (λ=1.05 μm)/ GaAsP strain-compensated laser diodes
Author :
Akinaga, E. ; Kuniyasu, T. ; Matsumoto, K. ; Fukunaga, T. ; Hayakawa, T.
Author_Institution :
Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan
Abstract :
High reliability has been achieved in 1.05 μm fundamental transverse-mode InGaAs single quantum well laser diodes using strain-compensating GaAsP tensile strain barriers. Stable fundamental transverse-mode operation up to 400 mW and 350 mW CW operation over 2500 h at 50°C were realised.
Keywords :
III-V semiconductors; compensation; gallium arsenide; laser modes; laser stability; laser transitions; quantum well lasers; semiconductor device reliability; 1.05 micron; 2500 h; 350 mW; 400 mW; 50 degC; CW operation; GaAsP; GaAsP laser diodes; GaAsP strain-compensated LDs; GaAsP tensile strain barriers; SQW laser diodes; fundamental transverse-mode; reliable operation; semiconductor lasers; single quantum well LDs; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030081
