Title :
Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 μm
Author :
Lauer, C. ; Ortsiefer, M. ; Shau, R. ; Rosskopf, J. ; Böhm, G. ; Maute, M. ; Köhler, F. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Continuous-wave operation of an electrically pumped vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 2.01 μm employing a heavily strained active region is reported.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 2.01 micron; InGaAlAs; InGaAs-InAlAs; InP; InP-based singlemode VCSEL; buried tunnel junction; continuous-wave operation; electrically pumped VCSEL; heavily strained active region; room temperature CW VCSELs; semiconductor lasers; vertical-cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030057
