• DocumentCode
    1154198
  • Title

    Importance of Auger recombination in InAs 1.3 μm quantum dot lasers

  • Author

    Marko, I.P. ; Andreev, A.D. ; Adams, A.R. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    It has been found that Auger recombination is very important in 1.3 μm quantum dot (QD) lasers at room temperature and is the cause of the low characteristic temperature, while in the 980 nm QD lasers radiative recombination dominates.
  • Keywords
    Auger effect; III-V semiconductors; current density; indium compounds; laser transitions; quantum dot lasers; 1.3 micron; Auger recombination; InAs; InAs quantum dot lasers; broad area GRINSCH structures; characteristic temperature; radiative recombination; room temperature; semiconductor lasers; temperature insensitive radiative current; temperature sensitivity; total threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030014
  • Filename
    1182350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154198