Title :
Importance of Auger recombination in InAs 1.3 μm quantum dot lasers
Author :
Marko, I.P. ; Andreev, A.D. ; Adams, A.R. ; Krebs, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
It has been found that Auger recombination is very important in 1.3 μm quantum dot (QD) lasers at room temperature and is the cause of the low characteristic temperature, while in the 980 nm QD lasers radiative recombination dominates.
Keywords :
Auger effect; III-V semiconductors; current density; indium compounds; laser transitions; quantum dot lasers; 1.3 micron; Auger recombination; InAs; InAs quantum dot lasers; broad area GRINSCH structures; characteristic temperature; radiative recombination; room temperature; semiconductor lasers; temperature insensitive radiative current; temperature sensitivity; total threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030014
