• DocumentCode
    1154289
  • Title

    Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD technique

  • Author

    Ray, S.K. ; Maiti, C.K. ; Chakrabarti, N.B.

  • Author_Institution
    Dept. of Electron., India Inst. of Technol., Kharagpur, India
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    1082
  • Lastpage
    1083
  • Abstract
    Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films.
  • Keywords
    dielectric thin films; integrated circuit technology; oxidation; plasma CVD coatings; semiconductor technology; silicon; silicon compounds; substrates; surface treatment; C-V characteristics; PECVD; Si; SiO 2-Si; SiO 2-SiO 2-Si; TEOS; electrical properties; low temperature deposition; metal-organic microwave plasma CVD technique; tetraethylorthosilicate; thin thermal oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900701
  • Filename
    108030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154289