DocumentCode
1154301
Title
Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
Author
Chang, Chia-Ta ; Hsiao, Shih-Kuang ; Chang, Edward Yi ; Lu, Chung-Yu ; Huang, Jui-Chien ; Lee, Ching-Ting
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu
Volume
30
Issue
3
fYear
2009
fDate
3/1/2009 12:00:00 AM
Firstpage
213
Lastpage
215
Abstract
This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. This phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is likely due to the additional donorlike surface states created through the piezoelectric effect.
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectricity; AlGaN-GaN; HEMT; high-electron mobility transistors; mechanical stress; piezoelectric effect; transient current; uniaxial tensile strain; AlGaN/GaN; gate orientations; high-electron mobility transistors (HEMTs); transient current; uniaxial tensile strain;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2012447
Filename
4781795
Link To Document