Title :
The effects of electron-hole Coulomb interaction in semiconductor lasers
Author :
Chow, Weng W. ; Koch, Stephan W. ; Sargent, Murray, III
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
A recent many-body theory is applied to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The many-body Coulomb corrections also result in a different prediction of filamentation effects in semiconductor lasers
Keywords :
electron-hole recombination; laser theory; many-body problems; refractive index; semiconductor junction lasers; Coulomb enhancement; band-gap renormalization; carrier-induced refractive index; electron-hole Coulomb interaction; filamentation effects; many-body Coulomb corrections; many-body theory; semiconductor laser gain; semiconductor lasers; Equations; Laboratories; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical saturation; Optical variables control; Refractive index; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
