Title :
Theory of high gain transient energy transfer in GaAs and Si
Author :
Valley, George C. ; Dubard, J. ; Smirl, Arthur L.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
Rate equations for carrier number densities and wave equations for optical fields are solved numerically to investigate transient energy transfer (TET) from a strong pump beam to a weak probe via the free-carrier nonlinearity in GaAs and Si. The calculations of TET include arbitrary ratio of pulse length to diffusion time, pump depletion, free-carrier absorption, and two-photon absorption. The calculations provide guidance on the optimal choice of sample thickness, free-carrier cross section, and two-photon absorption coefficient for obtaining high TET gains in semiconductors
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; laser theory; light absorption; nonlinear optics; optical pumping; semiconductor junction lasers; silicon; GaAs; Si; absorption coefficient; carrier number densities; diffusion time; free-carrier absorption; free-carrier cross section; free-carrier nonlinearity; high gain transient energy transfer; optical fields; pulse length; pump depletion; sample thickness; semiconductor laser gain theory; strong pump beam; two-photon absorption; wave equations; weak probe; Absorption; Energy exchange; Gallium arsenide; Gratings; Laser excitation; Nonlinear optics; Optical pulses; Optical pumping; Optical saturation; Probes;
Journal_Title :
Quantum Electronics, IEEE Journal of
