Title :
Tunneling calculations for GaAs-AlxGa(1-x)As graded band-gap sawtooth superlattices
Author :
Forrest, Kathrine ; Meijer, Paul H.E.
Author_Institution :
NASA-Goddard Space Flight Center, Greenbelt, MD, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al xGa(1-x)As superlattices are computed. The authors use a transfer matrix method, working within the framework of the effective mass approximation; band nonparabolicity and band-bending at heterojunctions are neglected. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; semiconductor superlattices; tunnelling spectra; GaAs-AlxGa(1-x)As; band nonparabolicity; band-bending; direct conduction band electrons; direct-gap interfaces; effective mass approximation; electric field strength; graded band-gap sawtooth superlattices; negative differential resistance; resonant tunneling; sawtooth GaAs-AlxGa(1-x)As superlattices; transfer matrix method; transmission resonance spectra; tunneling current-voltage characteristics; Avalanche photodiodes; Charge carrier processes; Current-voltage characteristics; Effective mass; Equations; Photonic band gap; Resonance; Resonant tunneling devices; Superlattices; Wave functions;
Journal_Title :
Quantum Electronics, IEEE Journal of
