Title :
Smooth Contact Capacitive Pressure Sensors in Touch- and Peeling-Mode Operation
Author :
Han, Jeahyeong ; Shannon, Mark A.
Author_Institution :
Dept. of Mech. Sci. & Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
fDate :
3/1/2009 12:00:00 AM
Abstract :
Capacitive (C) pressure sensors typically sense quadratic changes in C as a pressure difference (P) deflects a flexible conducting diaphragm near a rigid ground plane. Touch-mode capacitive pressure (C-P) sensors, where the conducting diaphragm touches a dielectric coated ground plane, often show a more linear response, but with less sensitivity, particularly at low-P. Initial contact of the diaphragm often occurs at a critical P. Until Pcrit is reached, the sensitivity is typically too low for accurate measurements. In this work, two different types of electrodes with ldquoparabolicrdquo and ldquodonutrdquo cavity-shapes have been designed, fabricated, and tested to achieve high-sensitivity at low-pressures. A flexible conducting diaphragm touches the bottom electrode smoothly, and both cavity shapes permit initial contact at a zero-pressure differential. This type of C-P sensors can have touch-mode and peeling-mode operations. The sensitivities of these sensors in two operation modes were measured, and their resolutions were smaller than 0.1 Pa at a mean pressure of 105 Pa. Both sensors in two modes have the resolution over total-pressure less than 106, which is difficult to achieve at atmospheric pressure.
Keywords :
capacitive sensors; pressure sensors; atmospheric pressure; cavity-shapes electrodes; flexible conducting diaphragm; peeling-mode operation; pressure difference; smooth contact capacitive pressure sensors; touch-mode capacitive pressure sensors; touch-mode operation; Atmospheric measurements; Biosensors; Capacitance; Capacitive sensors; Dielectric measurements; Electrodes; Pressure measurement; Shape; Silicon; Tactile sensors; Capacitive; peeling and touch-mode; pressure sensor; sensitivity; smooth Contact;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2008.2011090