• DocumentCode
    1154830
  • Title

    AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching

  • Author

    Gao, Y. ; Stonas, A.R. ; Ben-Yaacov, I. ; Mishra, U. ; DenBaars, S.P. ; Hu, E.L.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA, USA
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    Photoelectrochemical (PEC) wet etching was used to form the aperture of a novel AlGaN/GaN CAVET current aperture vertical electron transistor (CAVET) device. The PEC etch was optimised to produce a smooth, uniform undercut through the selective removal of the lower bandgap InGaN. The I-V characteristics of the initial devices indicate that modulation and pinch-off of the current can be obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium compounds; power field effect transistors; sapphire; two-dimensional electron gas; wide band gap semiconductors; 2DEG; Al2O3; AlGaN-GaN; AlGaN/GaN CAVET device; I-V characteristics; PEC etch optimisation; aperture formation; current aperture vertical electron transistors; current modulation; current pinch-off; device fabrication; high power devices; lower bandgap InGaN removal; photoelectrochemical wet etching; sapphire substrate; smooth uniform undercut; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030018
  • Filename
    1182409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154830