Title :
High channel density, 20 A 4H-SiC ACCUFET with Ronsp=15 mΩ-cm2
Author :
Singh, R. ; Capell, D.C. ; Richmond, J.T. ; Palmour, J.W.
Author_Institution :
Cree Inc., Durham, NC, USA
Abstract :
Planar gate 4H-SiC ACCUFETs have been designed, fabricated and characterised, and the highest reported current (>20 A) for this type of device was achieved. A novel channel design to maximise the channel density was implemented. A low specific on-resistance of 15 mΩ-cm2 was obtained on a 9 mm2 device using newly developed N2O anneals on gate oxides. The threshold voltage decreases from 1.5 to 0.9 V, and the extracted channel mobility increases from 18 to 33.6 cm2/V-s as the operating temperature is increased from 30 to 200°C.
Keywords :
accumulation layers; annealing; carrier mobility; power MOSFET; silicon compounds; wide band gap semiconductors; 0.9 to 1.5 V; 20 A; 30 to 200 C; 4H-SiC ACCUFET; MOS gate; N2O; N2O anneals; SiC; accumulation channel layer; channel design; channel mobility; gate oxides; gate-source layout; high channel density; low specific on-resistance; operating temperature; planar gate ACCUFETs; power MOS-based devices; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030033
