Title :
Physics-based modelling and simulation of dual material gate stack (DUMGAS) MOSFET
Author :
Saxena, M. ; Haldar, S. ; Gupta, M. ; Gupta, R.S.
Author_Institution :
Dept. of Phys. & Electron., Univ. of Delhi, New Delhi, India
Abstract :
A new structure, dual-material gate stack (DUMGAS)-MOSFET and its 2D analytical model are proposed. The model offers new opportunities for realising future ULSI circuits with the DUMGAS-MOSFET.
Keywords :
MOS integrated circuits; MOSFET; ULSI; electron mobility; semiconductor device models; DUMGAS; MOSFET; ULSI; carrier transport efficiency; dual material gate stack; electron velocity; physics-based modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030007
