DocumentCode :
1155144
Title :
A 700+-mW class D design with direct battery hookup in a 90-nm process
Author :
Forejt, Brett ; Rentala, Vijay ; Arteaga, Jose Duilio ; Burra, Gangadhar
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
40
Issue :
9
fYear :
2005
Firstpage :
1880
Lastpage :
1887
Abstract :
A "battery connect" compatible class D (switching) amplifier which is fully integrated in a 90-nm digital CMOS process is presented. The integration of the amplifier requires no additional masks, processing, or cost. This paper includes a brief description of the circuit techniques that enable direct battery (2.7-5.4 V) connection and allow support >6.7 VP2P (700 mW into 8 Ω) output swing from a 4.2-V supply using devices that operate solely with low gate voltages. The achieved SNR over an audio (20 Hz to 20 kHz) bandwidth >98.5 dB and the total harmonic distortion (THD) is better than 0.03% at 500 mW. Efficiency is greater than 75% above 375 mW. The power supply rejection ratio, which is a crucial parameter in modules connected directly to the battery, is measured at 70 dB at 217 Hz. The area of the switching amplifier is <0.44 mm2, where the power devices occupy approximately 20% of the total.
Keywords :
CMOS digital integrated circuits; amplifiers; harmonic distortion; system-on-chip; 2.7 to 5.4 V; 700 mW; 90 nm; circuit techniques; class D amplifier; common mode rejection ratio; digital CMOS process; direct battery connection; electromagnetic interference; low drop-out regulator; power supply rejection ratio; pulse-width modulation; signal-to-noise ratio; switching amplifier; system-on-chip; total harmonic distortion; ultra-deep submicron; Area measurement; Bandwidth; Batteries; CMOS process; Circuits; Costs; Distortion measurement; Low voltage; Power supplies; Total harmonic distortion; Class D amplifier; common mode rejection ratio (CMRR); efficiency; electromagnetic interference (EMI); low drop-out regulator (LDO); power supply rejection ratio (PSRR); pulse-width modulation (PWM); signal-to-noise ratio (SNR); system-on-chip (SOC); total harmonic distortion (THD); ultradeep submicron (UDSM);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2005.848147
Filename :
1501987
Link To Document :
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