A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-μm CMOS

Author

Komijani, Abbas ; Natarajan, Arun ; Hajimiri, Ali

Author_Institution

California Inst. of Technol., Pasadena, CA, USA

Volume

40

Issue

9

fYear

2005

Firstpage

1901

Lastpage

1908

Abstract

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-Ω input and output matching is demonstrated in 0.18-μm CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm².

Keywords

CMOS integrated circuits; MMIC power amplifiers; circuit stability; coplanar waveguides; impedance matching; 0.18 micron; 100 mA; 2.8 V; 24 GHz; 3.1 GHz; 50 ohm; 7 dB; CMOS integrated circuits; amplifier stability; circuit techniques; coplanar waveguide structures; fully integrated power amplifier; matching networks; phased arrays; radio transmitters; unconditionally stable amplifier; CMOS technology; Coplanar waveguides; Frequency; Germanium silicon alloys; MOSFETs; Phased arrays; Power amplifiers; Propagation losses; Radio transmitters; Silicon germanium; Amplifier stability; CMOS integrated circuits; coplanar waveguides; phased arrays; radio transmitters; silicon;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.848143

Filename

1501990